Method and composition for improving LWR in patterning process using negative photoresist

摘要

The present invention relates to a method of improving LWR (Line Width Roughness) of a photoresist pattern using a negative photoresist during a semiconductor manufacturing process, and more particularly, for securing a higher pattern CDU after a negative developing step. It is an object of the present invention to provide a better CDU as compared to the prior art by providing a composition and an application method capable of improving LWR to improve LWR. [Selected figure] Figure 1