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Substrates for temperature compensated surface acoustic wave devices or bulk acoustic wave devices

机译:用于温度补偿的表面声波器件或体声波器件的基板

摘要

Substrates for temperature compensated surface acoustic wave devices or bulk acoustic wave devices. The present invention is a substrate (1) for a surface acoustic wave device or a bulk acoustic wave device comprising a support substrate (11) and a piezoelectric layer (10) on the support substrate, wherein the support substrate (11) And the semiconductor layer (111) on the reinforcing substrate (110), the thermal expansion coefficient of the reinforcing substrate is closer to the thermal expansion coefficient of the material of the piezoelectric layer (10) than the material of silicon, and the semiconductor layer (111) The substrate (1) is characterized in that it is arranged between a piezoelectric layer (10) and a reinforcing substrate (110).
机译:用于温度补偿的表面声波器件或体声波器件的基板。本发明是一种用于表面声波装置或体声波装置的基板(1),其包括支撑基板(11)和在该支撑基板上的压电层(10),其中该支撑基板(11)和该半导体在增强基板(110)上的层(111)上,增强基板的热膨胀系数比硅和半导体层(111)的材料更接近压电层(10)的材料的热膨胀系数。基板(1)的特征在于,其被布置在压电层(10)和增强基板(110)之间。

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