A temperature-compensated surface acoustic wave device or a substrate for a bulk acoustic wave device

摘要

The present invention relates to a substrate (1) for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate (11) and a piezoelectric layer (10) on the support substrate, wherein the reinforcement substrate Has a coefficient of thermal expansion that is closer to the thermal expansion coefficient of the material of the piezoelectric layer 10 than the thermal expansion coefficient and the semiconductor layer 111 is arranged between the piezoelectric layer 10 and the reinforcing substrate 110.