Nanowire fabrication method for horizontal gate all-around devices for semiconductor applications

摘要

The present disclosure provides a method for forming a nanowire spacer for a nanowire structure with a desired material in a horizontal gate all-around (hGAA) structure of a semiconductor chip. In one example, a method of forming a nanowire space for a nanowire structure on a substrate is to perform a lateral etching process on a substrate having a multi-material layer to be processed thereon, the multi-material layer being Including repeating first and second layer pairs, the first and second layers having first and second sidewalls exposed in the multi-material layer, respectively, in a lateral direction The etching process mainly includes performing a lateral etching process to etch the second layer through the second layer to form a recess in the second layer, filling the recess with a dielectric material, Removing the dielectric layer extending out of the substrate. [Selection] Figure 5F