The present disclosure provides methods for forming nanowire spacers for nanowire structures having the required materials in horizontal gate all around (hGAA) structures for semiconductor chips. In one example, a method of forming nanowire spacers for nanowire structures on a substrate includes performing a lateral etch process on a substrate on which a multi-material layer is disposed, wherein the multi-material layer comprises a first layer and a second layer Wherein the first and second layers each have a first sidewall and a second sidewall exposed in a multi-material layer, respectively, and wherein the transverse etching process predominantly etches the second layer through the second layer Thereby forming a recess in the second layer; Filling the recess with a dielectric material; And removing the overfilled dielectric layer from the recess.
展开▼
