Method for producing SiC substrate with graphene precursor and surface treatment method for SiC substrate

摘要

A graphene precursor formation step of forming a graphene precursor by sublimating Si atoms on the Si surface of the surface of the SiC substrate by heating the SiC substrate and stopping the heating before the graphene precursor is covered with the graphene including. The SiC substrate processed in the graphene precursor forming step is formed with a step composed of a plurality of molecular layers. In the step, a step structure is formed in which the dangling bonds of C atoms are located on the surface side of one molecular layer and the two molecular layers of dangling bonds of C atoms are located.