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Tunnel field-effect transistor and tunnel field-effect transistor production method
Tunnel field-effect transistor and tunnel field-effect transistor production method
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机译:隧道场效应晶体管及隧道场效应晶体管的制造方法
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摘要
A tunnel field-effect transistor (TFET) is provided. In the TFET, a channel region (202) connects a source region (201) and a drain region (203); a pocket layer (204) and a gate oxide layer (205) are successively produced between the source region and a gate region (206); a metal layer (208) is produced in a first area in the source region, the first area is located on a side on which the source region is in contact with the pocket layer, and the pocket layer covers at least a part of the metal layer; and the pocket layer and a second area in the source region form a first tunnel junction of the TFET, and the pocket layer and the metal layer form a second tunnel junction of the TFET.
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