Comparative Study of Tunneling Field-Effect Transistors and Metal-Oxide-Semiconductor Field-Effect Transistors

摘要

Electrical characteristics of tunneling field-effect transistors (FETs) have been compared with those of metal-oxide-semiconductor FETs (MOSFETs) in terms of subthreshold swing (SS), on/off current ratio, off current and on current. According to simulation results, tunneling FETs have advantages over MOSFETs for low-power consumption: smaller SS below 60 mV/dec at room temperature, lower off current, higher on/off current ratio and better immunity to short channel effects. However, low on current of tunneling FETs is problematic for reasonable circuit performance. In this paper, in order to boost on current, strain-induced low bandgap substrate has been considered. It is observed that on current of tunneling FETs can be comparable with that of MOSFETs as more strain is applied. The tunneling FET can be thought of as a promising alternative to the MOSFET for low-power application.