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Method of reconfiguring uncrowned standard cells and semiconductor apparatus including uncrowned and crowned cells

机译:重构非冠状标准单元的方法和包括非冠状和冠状单元的半导体装置

摘要

A method is applied to reconfigure a set of uncrowned standard cells in a layout of a semiconductor apparatus. Each uncrowned standard cell includes a standard first array. Each standard first array includes a first stacked arrangement of vias interspersed with first segments of corresponding M(i)˜M(N) metallization layers. The M(N) metallization layer includes second segments which connect corresponding first segments of the M(N) metallization layer in the first standard arrays. The method includes crowning each first standard array in the set with a corresponding second standard array, the latter including a second stacked arrangement of vias interspersed with corresponding first segments of corresponding M(N+1)˜M(N+Q) metallization layers. The crowning includes disposing vias in a VIA(N+1) layer so as to be substantially collinear (relative to a first direction), and not substantially collinear (relative to a substantially perpendicular second direction), with corresponding vias in the VIA(N) layer.
机译:一种方法被应用于在半导体装置的布局中重新配置一组未加冠的标准单元。每个未加冕的标准单元都包括一个标准的第一阵列。每个标准的第一阵列包括穿插有对应的M(i)〜M(N)金属化层的第一段的通孔的第一堆叠布置。 M(N)金属化层包括第二段,其连接第一标准阵列中的M(N)金属化层的对应的第一段。该方法包括用相应的第二标准阵列在组中的每个第一标准阵列加冠,后者包括通孔的第二堆叠布置,该第二堆叠布置的通孔散布有相应的M(N + 1)〜M(N + Q)个金属化层的相应的第一段。隆起包括在VIA(N + 1)层中设置通孔,以便与VIA(N)中的相应通孔基本上共线(相对于第一方向),而基本上不共线(相对于基本垂直的第二方向)。 )层。

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