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Dynamic wafer leveling/tilting/swiveling steps for use during a chemical vapor deposition process

机译:在化学气相沉积过程中使用的动态晶圆调平/倾斜/旋转步骤

摘要

The implementations described herein generally relate to steps for the dynamic, real-time control of the process spacing between a substrate support and a gas distribution medium during a deposition process. Multiple dimensional degrees of freedom are utilized to change the angle and spacing of a substrate plane with respect to the gas distributing medium at any time during the deposition process. As such, the substrate and/or substrate support may be leveled, tilted, swiveled, wobbled, and/or moved during the deposition process to achieve improved film uniformity. Furthermore, the independent tuning of each layer may be had due to continuous variations in the leveling of the substrate plane with respect to the showerhead to average effective deposition on the substrate, thus improving overall stack deposition performance.
机译:本文描述的实施方式总体上涉及用于在沉积工艺期间动态,实时地控制基板支撑件与气体分布介质之间的工艺间隔的步骤。多维自由度用于在沉积过程中的任何时间改变衬底平面相对于气体分布介质的角度和间距。这样,可以在沉积过程中将衬底和/或衬底支撑件调平,倾斜,旋转,摆动和/或移动,以实现改善的膜均匀性。此外,由于相对于喷头的基板平面的水平的连续变化,可以具有每层的独立调整,以平均在基板上的有效沉积,从而提高了整体叠层沉积性能。

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