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Manufacture method of IPS TFT-LCD array substrate and IPS TFT-LCD array substrate

机译:IPS TFT-LCD阵列基板的制造方法及IPS TFT-LCD阵列基板

摘要

The present invention provides a manufacture method of an IPS TFT-LCD array substrate and an IPS TFT-LCD array substrate. In the manufacture method of the IPS TFT-LCD array substrate, the common electrode line and the gate are manufactured with the same metal layer, and the pixel electrode and the drain are manufactured with the same metal layer, and the via is formed in the insulation protective layer and the gate isolation layer correspondingly above the common electrode line; in the TFT array substrate, the pixel electrode and the drain are manufactured with the same metal layer, and the common electrode line and the gate are manufactured with the same metal layer, and the common electrode is transparent conductive material and located on the insulation protective layer, and the common electrode contact with the common electrode line through the via in the insulation protective layer and the gate isolation layer.
机译:本发明提供了一种IPS TFT-LCD阵列基板和IPS TFT-LCD阵列基板的制造方法。在IPS TFT-LCD阵列基板的制造方法中,公共电极线和栅极用相同的金属层制造,像素电极和漏极用相同的金属层制造,并在其中形成通孔。绝缘保护层和栅隔离层分别位于公共电极线上方。在TFT阵列基板中,像素电极和漏极采用相同的金属层制造,公共电极线和栅极采用相同的金属层制造,所述公共电极为透明导电材料并位于绝缘保护层上绝缘层和栅极隔离层中的公共电极通过通孔与公共电极线接触。

著录项

  • 公开/公告号US10310338B2

    专利类型

  • 公开/公告日2019-06-04

    原文格式PDF

  • 申请/专利号US201615026253

  • 发明设计人 XIANGYANG XU;

    申请日2016-02-25

  • 分类号G02F1/1343;H01L21/77;H01L27/12;G02F1/1362;G02F1/1368;H01L21/02;H01L21/027;H01L21/285;H01L21/306;H01L21/308;H01L21/311;H01L21/3213;H01L29/423;H01L29/45;H01L29/49;H01L29/51;H01L29/66;H01L29/786;

  • 国家 US

  • 入库时间 2022-08-21 12:12:26

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