首页>
外国专利>
Method and system for lithography process-window-maximizing optical proximity correction
Method and system for lithography process-window-maximizing optical proximity correction
展开▼
机译:光刻工艺窗口最大化光学接近度校正的方法和系统
展开▼
页面导航
摘要
著录项
相似文献
摘要
An efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(ε,ƒ)=P0+ƒ2·Pb with a threshold of T+Vε for contours, where PO represents image intensity at nominal focus, ƒ represents the defocus value relative to the nominal focus, ε represents the exposure change, V represents the scaling of exposure change, and parameter “Pb” represents second order derivative images. In another given embodiment, the analytical optimal gray level is given for best focus with the assumption that the probability distribution of focus and exposure variation is Gaussian.
展开▼
机译:一种有效的OPC方法,可提高用于对具有多个特征的目标设计成像的光刻工艺的成像性能。该方法包括确定用于生成仿真图像的功能,其中该功能考虑与光刻工艺相关的工艺变化;以及并基于此功能为每个OPC迭代中的每个评估点优化目标灰度级。在一个给定的实施例中,该函数近似为焦点和曝光的多项式函数,R(ε,ƒ)= P 0 Sub> +ƒ 2 Sup>·P b Sub>具有阈值T +Vε的轮廓,其中P O Sub>代表标称聚焦的图像强度,ƒ代表相对于标称聚焦的散焦值,ε代表曝光变化,V代表曝光变化的比例,参数“ P b Sub>”代表二阶导数图像。在另一个给定的实施例中,假定焦点和曝光变化的概率分布是高斯,给出最佳焦点的分析最优灰度级。
展开▼