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Method for extending lifetime of resistive change memory and data storage system using the same

机译:延长电阻变化存储器寿命的方法和使用该方法的数据存储系统

摘要

A method for extending the lifetime of a resistive change memory includes generating data and hash candidates by shuffling bit positions of write data with the hash candidates in response to a write request for the resistive change memory, calculating Hamming distances of the generated data and hash candidates from stored data and a stored hash, matching stuck data at a predetermined bit in the resistive change memory with the generated data and hash candidates when the stuck data is at the predetermined bit, and excluding mismatched data and hash candidates that are mismatched with the stuck data among the generated data and hash candidates, finding a data and hash candidate with the shortest Hamming distance among the matched data and hash candidates, and choosing the found data and hash candidate as an encoded data and hash, and storing the encoded data and hash in the resistive change memory.
机译:延长电阻变化存储器的寿命的方法包括:通过响应于对电阻变化存储器的写入请求,通过用哈希候选物对写入数据的位位置进行混洗来生成数据和哈希候选物,计算所生成的数据和哈希候选物的汉明距离从存储的数据和存储的哈希中,当停留数据在预定位时将电阻变化存储器中预定位的停留数据与生成的数据和哈希候选进行匹配,并排除与停留项不匹配的不匹配数据和哈希候选在生成的数据和散列候选中选择数据,在匹配的数据和散列候选中查找汉明距离最短的数据和散列候选,选择找到的数据和散列候选作为编码数据和散列,并存储编码数据和散列在电阻变化存储器中。

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