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Method of depositing film by PEALD using negative bias

机译:使用负偏压通过PEALD沉积膜的方法

摘要

A method of forming a film on a substrate by PEALD includes deposition cycles, each including (i) feeding a precursor in a pulse to a reaction space to adsorb a precursor on a surface of a substrate; (ii) after step (i), applying RF power to a second electrode to generate in the reaction space a plasma to which the precursor-adsorbed surface is exposed, thereby forming a sublayer on the surface; and (iii) applying a bias voltage to the second electrode while applying RF power in step (ii), which bias voltage is negative with reference to a potential on a surface of the first electrode, wherein the cycle is repeated to deposit multiple sublayers until a film constituted by the sublayers has a desired thickness.
机译:一种通过PEALD在基板上形成膜的方法,包括沉积循环,每个沉积循环包括:(i)以脉冲形式将前体馈送到反应空间,以将前体吸附在基板表面上; (ii)在步骤(i)之后,将RF功率施加到第二电极,以在反应空间中产生等离子体,该等离子体暴露了前体吸附表面,从而在该表面上形成亚层; (iii)在步骤(ii)中施加RF功率的同时向第二电极施加偏置电压,该偏置电压相对于第一电极表面上的电势为负,其中重复该循环以沉积多个子层直到由子层构成的膜具有期望的厚度。

著录项

  • 公开/公告号US10312055B2

    专利类型

  • 公开/公告日2019-06-04

    原文格式PDF

  • 申请/专利权人 ASM IP HOLDING B.V.;

    申请/专利号US201715659631

  • 发明设计人 TOSHIYA SUZUKI;

    申请日2017-07-26

  • 分类号C23C16/34;C23C16/40;C23C16/44;H01J37/32;H01L21/02;C23C16/455;C23C16/505;

  • 国家 US

  • 入库时间 2022-08-21 12:12:04

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