The method of supercritical carbon dioxide low dielectric constant films

摘要

The disclosure relates generally on molding device and method low k dielectric substrate. This method is to utilize wet processing chamber, the solvent of chamber and the chamber of supercritical fluid in various substrate processing steps. More specifically, dielectric material can be deposited on substrate and dissolving agent process in aqueous solution can be performed to prepare for supercritical drying process. In supercritical drying process, liquid is present in solution and has remained removing by distillation in supercritical drying process on substrate in exchange process. The dielectric material substrate of the formation of generation is considered aerosil, and which shows low k-value.