Low dielectric constant fluorocarbonated silicon films for integrated circuits and method of preparation

摘要

Fluorocarbonated silicon films having very low dielectric constants, and a method for fabricating those films are disclosed. The low dielectric constants of the novel films make them suitable for use in ULSI fabrication techniques. The novel films may be prepared using a SiH₄ or Si₂H₆ precursor as a silicon source, and CF₄, C₂F₆, or C₄F₈ as a source of carbon and fluorine. The films not only have low dielectric constants (typically, k1.9 to 2.3), they also exhibit high dielectric breakdown voltages. The process may be carried out at relatively low temperatures. The novel films may readily be used with conventional etching techniques, and they adhere well.