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Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wells

机译：使用CMOS阱的扩散电阻降低了电阻的电压系数并增加了击穿电压

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摘要

Integrated circuits and manufacturing methods are presented for creating diffusion resistors (101, 103) in which the diffusion resistor well is spaced from oppositely doped wells to mitigate diffusion resistor well depletion under high biasing so as to provide reduced voltage coefficient of resistivity and increased breakdown voltage for high-voltage applications.

机译：提出了用于制造扩散电阻器（ 101、103 ）的集成电路和制造方法，其中扩散电阻器阱与相反掺杂的阱间隔开，以减轻在高偏置下扩散电阻器阱的损耗，从而提供降低的电压高压应用中的电阻率系数和增加的击穿电压。 展开▼

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公开/公告号US10128145B2

专利类型

公开/公告日2018-11-13

原文格式PDF

申请/专利权人 TEXAS INSTRUMENTS INCORPORATED;
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申请/专利号US201414220693

发明设计人 AMITAVA CHATTERJEE;KAMEL BENAISSA;
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申请日2014-03-20

分类号H01L21/761;H01L21/8234;H01L29/8605;H01L29/66;H01L27/08;H01L21/266;H01L27/06;

国家 US

入库时间 2022-08-21 12:11:40

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1. 使用CMOS阱的具有减小的电阻率电压系数和增加的击穿电压的扩散电阻器 [P] . 中国专利： CN103681656A . 2014-03-26

2. 一种N阱电阻类器件电压依存系数的提取方法 [P] . 中国专利： CN1888926A . 2007-01-03

3. DIFFUSION RESISTOR WITH REDUCED VOLTAGE COEFFICIENT OF RESISTANCE AND INCREASED BREAKDOWN VOLTAGE USING CMOS WELLS [P] . 美国专利： US2014227859A1 . 2014-08-14

机译：使用CMOS阱具有降低的电阻电压系数和增加的击穿电压的扩散电阻

4. DIFFUSION RESISTOR WITH REDUCED VOLTAGE COEFFICIENT OF RESISTANCE AND INCREASED BREAKDOWN VOLTAGE USING CMOS WELLS [P] . 美国专利： US2014070361A1 . 2014-03-13

机译：使用CMOS阱具有降低的电阻电压系数和增加的击穿电压的扩散电阻

5. Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wells [P] . 美国专利： US8716827B2 . 2014-05-06

机译：使用CMOS阱的扩散电阻降低了电阻的电压系数并增加了击穿电压

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