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PULLING CONTROL DEVICE FOR SINGLE CRYSTAL INGOT GROWTH AND PULLING CONTROL METHOD APPLIED THERETO
PULLING CONTROL DEVICE FOR SINGLE CRYSTAL INGOT GROWTH AND PULLING CONTROL METHOD APPLIED THERETO
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机译:单晶锭生长的牵引控制装置及其应用的牵引控制方法
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摘要
The present invention relates to a pulling control device for growing a single crystal ingot capable of controlling an eccentricity of a single crystal ingot by varying a seed rotation number in real time, and a pulling control method applied thereto.;According to the present invention, a pulling control device for growing a single crystal ingot and a pulling control method applied thereto may minimize that a seed rotation number (f) is set to a specific rotation number (fo) causing a resonance phenomenon of a melt by providing a target seed output rotation number (T_fout) that varies in real time so as to match a rotation form for each length of an ingot according to inputting a target seed input rotation number (T_fin) and controlling a rotation number (f) of a seed cable, and it is possible to prevent fluctuation of the melt and an eccentricity phenomenon of the ingot.
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机译:本发明涉及一种用于生长单晶锭的提拉控制装置,该提拉控制装置能够通过实时改变籽晶转数来控制单晶锭的偏心度,以及其所应用的提拉控制方法。用于生长单晶锭的提拉控制装置及其应用的提拉控制方法可以通过提供目标种子输出而将种子旋转数(f)设置为引起熔体共振现象的特定旋转数(fo)最小化实时变化的转数(T_f out Sub>),以便根据输入目标种子输入转数(T_f in Sub>)来匹配锭的每个长度的旋转形式)和控制种线的转数(f),可以防止熔体的波动和铸锭的偏心现象。
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