METHOD TO ACHIEVE ACTIVE P-TYPE LAYER/LAYERS IN III-NITRIDE EPITAXIAL OR DEVICE STRUCTURES HAVING BURIED P-TYPE LAYERS

摘要

An optoelectronic or electronic device structure, including an active region on or above a polar substrate, wherein the active region comprises a polar p region. The device structure further includes a hole supply region on or above the active region. Holes in the hole supply region are driven by a field into the active region, the field arising at least in part due to a piezoelectric and/or spontaneous polarization field generated by a composition and grading of the active region.