首页> 美国政府科技报告 >Raman Scattering in Strained Highly-Doped P-Type GaAs/GaAsP Epitaxial Layers.

【24h】

Raman Scattering in Strained Highly-Doped P-Type GaAs/GaAsP Epitaxial Layers.

机译：应变高掺杂p型Gaas / Gaasp外延层中的拉曼散射。

获取原文

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

No abstract available.

著录项

作者
Subashiev, A. V.; Davydov, V. Y.; Goncharuk, I. N.; Smirnov, A. N.; Kovalenkov, O. V.;
展开▼
作者单位

展开▼
年度 1998
页码 1-4
总页数 4
原文格式 PDF
正文语种
中图分类
关键词
Meetings; Superlattices; Raman spectra; Light scattering; Gallium arsenides; Epitaxial growth; Gallium phosphides; Component report; Foreign reports; Raman scattering;

机译：会议;超晶格;拉曼光谱;光散射;砷化镓;外延生长;磷化镓;成分报告;外国报道;拉曼散射;

相似文献

外文文献
中文文献
专利

1. Longitudinal Optical Phonon-Plasmon Coupled Mode in Undoped GaAs-Type GaAs Epitaxial Structures Observed by Raman Scattering and Terahertz Time-Domain Spectroscopic Measurements: Difference in Observed Modes and Initial Polarization Effects [J] . Hideo Takeuchi, Takahiro Sumioka, Masaaki Nakayama Terahertz Science and Technology, IEEE Transactions on . 2017,第2期

机译：拉曼散射和太赫兹时域光谱测量观察的未掺杂GaAs / n型GaAs外延结构中的纵向光学声子-等离子体耦合模式：观测模式的差异和初始极化效应
2. Raman Scattering by Optical Phonons in a Highly Strained InAs/GaAs Monolayer [J] . S. Reich, A. R. Goni, C. Thomsen, Physica status solidi, B. Basic research . 1999,第1期

机译：高应变InAs / GaAs单层中光学声子的拉曼散射
3. Raman scattering study of LO phonon-plasmon coupled modes in p-type InGaAs [J] . Cusco Ramon, Domenech-Amador Nuria, Hung P. Y., Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2015,第Null期

机译：p型InGaAs中LO声子-等离子体耦合模的拉曼散射研究。
4. Determination of Subband Energy Levels from Self-Excited Raman Scattering in Compressively Strained InGaAs/GaAs Quantum Well Lasers [C] . W. Susaki, H. Yaku, Kenji Nishikawa, Society of Photo-Optical Instrumentation Engineers Conference on Physics and Simulation of Optoelectronic Devices . 2002

机译：从压缩紧张的indaAs / GaAs量子阱激光器中的自激拉曼散射测定子带节能
5. AIGaAs 及びGaAsP 中の深い準位に関する研究利用統計を見る [D] . 野毛宏 1986

机译：查看AIGaAs和GaAsP中深层的研究利用率统计信息
6. Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures [O] . Ömer Dönmez, Fahrettin Sarcan, Ayse Erol, 2014

机译：退火生长的n型和p型调制掺杂GaInNAs / GaAs应变量子阱结构的磁输运研究
7. Raman scattering study of LO phonon-plasmon coupled modes in p-type InGaAs [O] . Cuscó Ramón, Domènech-Amador Núria, Hung P.Y., 2015

机译：p型InGaAs中LO声子-等离子体耦合模的拉曼散射研究。

Raman Scattering in Strained Highly-Doped P-Type GaAs/GaAsP Epitaxial Layers.

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅