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ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY
ASYMMETRIC PASS FIELD-EFFECT TRANSISTOR FOR NONVOLATILE MEMORY
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机译:非易失性存储器的非对称通过场效应晶体管
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摘要
A method of performing an operation on a non-volatile memory (NVM) cell of a memory device is disclosed. The pass transistor of the NVM cell is an asymmetric transistor including a source with a halo implant. The source of the pass transistor is coupled to a common source line (CSL) that is shared among NVM cells of a sector of NVM cells. The operation may be performed by applying a first signal to a word line (WLS) coupled to a gate of a memory transistor of the NVM cell and applying a second signal to a bit line (BL) coupled to a drain of the memory transistor of the NVM cell.
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