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Cost-effective method to form a reliable memory device with selective silicidation and resulting device
Cost-effective method to form a reliable memory device with selective silicidation and resulting device
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机译:形成具有选择性硅化物的可靠存储设备的经济有效的方法以及由此产生的设备
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摘要
A method of forming a memory device with a dielectric blocking layer and selective silicidation and the resulting device are provided. Embodiments include forming a memory stack on a substrate; forming a conformal insulating layer over sidewalls and an upper surface of the memory stack and the substrate; forming an interpoly dielectric structure adjacent to each sidewall of the insulating layer; forming a conformal polysilicon silicon layer over the insulating layer and interpoly dielectric structures; forming an optical planarization layer over the polysilicon layer; planarizing the optical planarization and polysilicon layers down to the memory stack; forming a dielectric blocking layer over the memory stack and substrate; forming a patterning stack over the dielectric blocking layer, the patterning stack covering a portion of the memory stack; and removing the dielectric blocking, optical planarization, and polysilicon layers on opposite sides of the patterning stack.
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