Vertical FETs with different gate lengths and spacer thicknesses

摘要

Techniques for forming VFETs with differing Lg using fins of the same height are provided. In one aspect, a method of forming a VFET device includes: patterning (first/second) fins having a uniform fin height in a substrate; forming bottom source/drains at a base of the fins; forming first bottom spacers on the bottom source/drains; selectively forming second bottom spacers (as a dopant source) at the base of the second fins; driving dopants from the bottom source/drains into the first fins and also from second bottom spacers into the second fins to form bottom junctions having a height H1 and H2, respectively, wherein H2H1; forming gates along the fins, wherein the gates along the first/second fins have Lg1/Lg2, wherein Lg1Lg2 based on H2H1; forming top spacers above the gates; and forming top source and drains above the top spacers. VFET devices are also provided.