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ATOMIC LAYER ETCHING USING A BORON-CONTAINING GAS AND HYDROGEN FLUORIDE GAS
ATOMIC LAYER ETCHING USING A BORON-CONTAINING GAS AND HYDROGEN FLUORIDE GAS
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机译:使用含硼气体和氟化氢气体进行原子层刻蚀
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摘要
Embodiments of the invention provide a method for atomic layer etching (ALE) of a substrate. According to one embodiment, the method includes providing a substrate, and exposing the substrate to hydrogen fluoride (HF) gas and a boron-containing gas to etch the substrate. According to another embodiment, the method includes providing a substrate containing a metal oxide film, exposing the substrate to HF gas to form a fluorinated surface layer on the metal oxide film, and exposing the substrate to a boron-containing gas to remove the fluorinated surface layer from the metal oxide film. The exposures may be repeated at least once to further etch the metal oxide film.
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