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ON-CHIP TDDB DEGRADATION MONITORING AND FAILURE EARLY WARNING CIRCUIT FOR SOC

机译:SOC的片上TDDB降级监控和故障早期预警电路

摘要

An on-chip TDDB degradation monitoring and failure early warning circuit for SoC. A control circuit module converts Q1 and Q0 signals into a switch state control signal and outputs the switch state control signal to a digital conversion module for TDDB performance degradation. A MOS transistor of a first MOS transistor circuit within the digital conversion module for TDDB performance degradation is in a stress state of a supply voltage, and a MOS transistor of a second MOS transistor circuit is in a non-stress state. The first and second MOS transistor circuits output a first frequency value and a second frequency value to the output selection module. The output selection module outputs the first frequency value from the digital conversion module to the counter B for recording, or outputs the second frequency value to the counter A for recording. The counter module determines the degradation level of TDDB performance.
机译:用于SoC的片上TDDB降级监视和故障预警电路。控制电路模块将Q 1 和Q 0 信号转换为开关状态控制信号,并将开关状态控制信号输出到数字转换模块,以降低TDDB的性能。用于TDDB性能降低的数字转换模块内的第一MOS晶体管电路的MOS晶体管处于电源电压的应力状态,而第二MOS晶体管电路的MOS晶体管处于非应力状态。第一和第二MOS晶体管电路将第一频率值和第二频率值输出到输出选择模块。输出选择模块将第一频率值从数字转换模块输出到计数器B进行记录,或者将第二频率值输出到计数器A进行记录。计数器模块确定TDDB性能的下降级别。

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