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METHOD AND SYSTEM FOR GROWTH OF GRAPHENE NANOSTRIPES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

机译:等离子体增强化学气相沉积法生长石墨烯纳米条的方法和系统

摘要

A method of forming graphene nanostripes includes providing a substrate comprising at least one of copper foil or nickel foam and subjecting the substrate to a reduced pressure environment in a processing chamber. The method also includes providing methane gas and 1,2-dichlorobenzene (1,2-DCB) gas, flowing the methane gas and the 1,2-DCB into the processing chamber, and establishing a partial pressure ratio of 1,2-DCB gas to methane gas in the processing chamber. The partial pressure ratio is between 0 and 3. The method further includes generating a plasma, thereafter, exposing the at least a portion of the substrate to the methane gas, the 1,2-DCB gas, and the plasma, and growing the graphene nanostripes coupled to the at least a portion of the substrate.
机译:一种形成石墨烯纳米带的方法,包括提供包括铜箔或泡沫镍中的至少一种的基底,并且在处理室中使该基底经受减压环境。该方法还包括提供甲烷气体和1,2-二氯苯(1,2-DCB)气体,使甲烷气体和1,2-DCB流入处理室,并建立1,2-DCB的分压比。气体转化为甲烷气体。分压比在0和3之间。该方法还包括产生等离子体,此后,将基板的至少一部分暴露于甲烷气体,1,2-DCB气体和等离子体中,并生长石墨烯。纳米带耦合至衬底的至少一部分。

著录项

  • 公开/公告号US2019093227A1

    专利类型

  • 公开/公告日2019-03-28

    原文格式PDF

  • 申请/专利权人 CALIFORNIA INSTITUTE OF TECHNOLOGY;

    申请/专利号US201815900517

  • 发明设计人 NAI-CHANG YEH;CHEN-CHIH HSU;

    申请日2018-02-20

  • 分类号C23C16/513;C23C16/26;C01B7/01;

  • 国家 US

  • 入库时间 2022-08-21 12:05:28

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