RESISTIVE MEMORY DEVICE CONTAINING OXYGEN-MODULATED HAFNIUM OXIDE MATERIAL AND METHODS OF MAKING THEREOF

摘要

A resistive memory device includes a first electrode, a second electrode spaced from the first electrode along a spacing direction, and a hafnium oxide resistive material portion of a resistive memory cell located between the first electrode and the second electrode and having a compositional modulation in oxygen concentration within directions that are perpendicular to the spacing direction.