An RRAM device is disclosed. The RRAM device includes a lower electrode structure over a conductive lower interconnect layer, an upper electrode structure over the lower electrode structure, and a switching layer between the lower electrode and the upper electrode structure. The switching layer has switching layer outer sidewalls. The RRAM device also includes a recap layer having a vertical portion that extends vertically from corners of the switching layer along the upper electrode sidewalls. The recap layer has a horizontal portion that extends horizontally from the corners to the switching layer outer sidewalls.
展开▼
