FABRICATION OF FIN FIELD EFFECT TRANSISTORS FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES INCLUDING SEPARATE N-TYPE AND P-TYPE SOURCE/DRAINS USING A SINGLE SPACER DEPOSITION

摘要

A method of forming a complementary metal oxide semiconductor (CMOS) device on a substrate, including forming a plurality of vertical fins on the substrate, forming a first set of source/drain projections on the first subset of vertical fins, forming a second set of source/drain projections on the second subset of vertical fins, where the second set of source/drain projections is a different oxidizable material from the oxidizable material of the first set of source/drain projections, converting a portion of each of the second set of source/drain projections and a portion of each of the first set of source/drain projections to an oxide, removing the converted oxide portion of the first set of source/drain projections to form a source/drain seed mandrel, and removing a portion of the converted oxide portion of the second set of source/drain projections to form a dummy post.