DEVICE TO TRADE BETWEEN DIFFERENT MODALITIES OF NON-VOLATED MEMORY LETTER AND NON-VOLATED MEMORY LETTER METHOD

摘要

A memory device including a first memory sector (S') and a second memory sector (S"), each of which includes a respective plurality of local bit lines (LBL), which may be selectively coupled to a plurality of main bit lines (MBL). The memory device further includes a first amplifier (308) and a second amplifier (310), and a routing circuit (114), arranged between the main bit lines and the first and second amplifiers. The routing circuit includes: a first lower switch (324), arranged between a first lower main bit line (MBL1') and a first input of the first amplifier; a second lower switch (326), arranged between the first lower main bit line (MBL1') and a first input of the second amplifier; a first upper switch (320), arranged between a first upper main bit line (MBL2") and the first input of the first amplifier; and a second upper switch (322), arranged between the first upper main bit line (MBL2") and the first input of the second amplifier. The second inputs of the first and second amplifiers are coupled to a second lower main bit line (MBL2') and to a second upper main bit line (MBL1''), respectively.