首页> 外国专利> VANADIUM SILICON CARBONITRIDE FILM, VANADIUM SILICON CARBONITRIDE-COVERED MEMBER AND METHOD FOR MANUFACTURING SAME

VANADIUM SILICON CARBONITRIDE FILM, VANADIUM SILICON CARBONITRIDE-COVERED MEMBER AND METHOD FOR MANUFACTURING SAME

机译:钒硅碳化物膜,钒硅碳化物覆盖的膜及其制造方法

摘要

This vanadium silicon carbonitride film comprises vanadium, silicon, carbon, and nitrogen. When vanadium element concentration (vanadium element concentration + silicon element concentration + carbon element concentration + nitrogen element concentration) in the film is defined as "a," and silicon element concentration (vanadium element concentration + silicon element concentration + carbon element concentration + nitrogen element concentration) in the film is defined as "b," 0.30 ≤ a/b ≤ 1.3 and 0.30 ≤ a + b ≤ 0.70 are satisfied, and the sum of the vanadium element concentration, silicon element concentration, carbon element concentration, and nitrogen element concentration in the film is 90 [at%] or greater.
机译:该钒碳氮化硅膜包含钒,硅,碳和氮。将膜中的钒元素浓度(钒元素浓度+硅元素浓度+碳元素浓度+氮元素浓度)定义为“ a”,将硅元素浓度(钒元素浓度+硅元素浓度+碳元素浓度+氮元素)定义为“ a”。将膜中的浓度“ b”定义为“ b”,满足0.30≤a/b≤1.3且0.30≤a+b≤0.70,并且钒元素浓度,硅元素浓度,碳元素浓度和氮元素之和。膜中的浓度为90 [at%]或更高。

著录项

  • 公开/公告号WO2019035397A1

    专利类型

  • 公开/公告日2019-02-21

    原文格式PDF

  • 申请/专利权人 DOWA THERMOTECH CO. LTD.;

    申请/专利号WO2018JP29716

  • 申请日2018-08-08

  • 分类号C23C16/36;B21D37/01;B21D37/20;B23B27/14;B23F21;C23C16/34;C23C16/50;

  • 国家 WO

  • 入库时间 2022-08-21 11:56:32

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号