首页> 外国专利> VANADIUM SILICON CARBONITRIDE FILM, VANADIUM SILICON CARBONITRIDE-COVERED MEMBER AND METHOD FOR MANUFACTURING SAME.

VANADIUM SILICON CARBONITRIDE FILM, VANADIUM SILICON CARBONITRIDE-COVERED MEMBER AND METHOD FOR MANUFACTURING SAME.

机译:钒硅碳化物膜,钒硅碳化物覆盖的膜及其制造方法。

摘要

This vanadium silicon carbonitride film comprises vanadium, silicon, carbon, and nitrogen. When vanadium element concentration (vanadium element concentration + silicon element concentration + carbon element concentration + nitrogen element concentration) in the film is defined as "a," and silicon element concentration (vanadium element concentration + silicon element concentration + carbon element concentration + nitrogen element concentration) in the film is defined as "b," 0.30 = a/b = 1.3 and 0.30 = a + b = 0.70 are satisfied, and the sum of the vanadium element concentration, silicon element concentration, carbon element concentration, and nitrogen element concentration in the film is 90 [at%] or greater.
机译:该钒碳氮化硅膜包含钒,硅,碳和氮。将膜中的钒元素浓度(钒元素浓度+硅元素浓度+碳元素浓度+氮元素浓度)定义为“ a”,将硅元素浓度(钒元素浓度+硅元素浓度+碳元素浓度+氮元素)定义为“ a”。将膜中的浓度)定义为“ b”,满足0.30 = a / b = 1.3和0.30 = a + b = 0.70,并且钒元素浓度,硅元素浓度,碳元素浓度和氮元素之和。膜中的浓度为90 [at%]或更高。

著录项

  • 公开/公告号MX2019013278A

    专利类型

  • 公开/公告日2020-02-05

    原文格式PDF

  • 申请/专利权人 DOWA THERMOTECH CO. LTD.;

    申请/专利号MX20190013278

  • 申请日2018-08-08

  • 分类号C23C16/36;B21D37/01;B21D37/20;B23B27/14;B23F21;C23C16/34;C23C16/50;

  • 国家 MX

  • 入库时间 2022-08-21 11:16:58

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