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VANADIUM SILICON CARBONITRIDE FILM, VANADIUM SILICON CARBONITRIDE-COVERED MEMBER AND METHOD FOR MANUFACTURING SAME.
VANADIUM SILICON CARBONITRIDE FILM, VANADIUM SILICON CARBONITRIDE-COVERED MEMBER AND METHOD FOR MANUFACTURING SAME.
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机译:钒硅碳化物膜,钒硅碳化物覆盖的膜及其制造方法。
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摘要
This vanadium silicon carbonitride film comprises vanadium, silicon, carbon, and nitrogen. When vanadium element concentration (vanadium element concentration + silicon element concentration + carbon element concentration + nitrogen element concentration) in the film is defined as "a," and silicon element concentration (vanadium element concentration + silicon element concentration + carbon element concentration + nitrogen element concentration) in the film is defined as "b," 0.30 = a/b = 1.3 and 0.30 = a + b = 0.70 are satisfied, and the sum of the vanadium element concentration, silicon element concentration, carbon element concentration, and nitrogen element concentration in the film is 90 [at%] or greater.
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机译:该钒碳氮化硅膜包含钒,硅,碳和氮。将膜中的钒元素浓度(钒元素浓度+硅元素浓度+碳元素浓度+氮元素浓度)定义为“ a”,将硅元素浓度(钒元素浓度+硅元素浓度+碳元素浓度+氮元素)定义为“ a”。将膜中的浓度)定义为“ b”,满足0.30 = a / b = 1.3和0.30 = a + b = 0.70,并且钒元素浓度,硅元素浓度,碳元素浓度和氮元素之和。膜中的浓度为90 [at%]或更高。
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