THz transmittance and electrical properties of silicon doped vanadium dioxide films tuning by annealing temperature

摘要

Silicon doped vanadium dioxide (VO_2) films were successfully prepared on high purity Si(111) substrate. Confirmed by X-ray diffraction, all samples showed a preference orientation of (011) direction. Introducing silicon led grain sizes decreasing comparing to undoped VO_2 film, and this result induced a narrow hysteresis width in MIT performance. Furthermore, silicon doped VO_2 films annealing in different temperature presented different phase transition properties. In the electrical, a higher annealing temperature resulted in a decrease of sheet resistance and lowering the transition temperature. In terahertz optical transmittance, silicon doped VO_2 films keep an excellent modulation ratio, indicating a great potential in the application of terahertz modulator devices.