FABRICATION METHOD FOR LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN-FILM AND TRANSISTOR

摘要

Provided is a fabrication method for a low-temperature polycrystalline silicon thin-film, comprising: forming a buffer layer (32) on a substrate (31); forming a silicon layer (33) on the buffer layer (32), and forming an impurity trapping layer (34) on the silicon layer (33), wherein the impurity trapping layer (34) is porous in order to accommodate the impurities diffused from the substrate (31); and retaining the impurity trapping layer (34) on the silicon layer (33) and annealing the silicon layer (33) by means of laser illumination so as to form a polycrystalline silicon layer.