METHOD FOR IN-SITU INJECTION AND SYNTHESIS OF PHOSPHIDE BY USING BEARING GAS

摘要

A method for in-situ injection and synthesis of a phosphide by using a bearing gas, which relates to a synthesis method for a semiconductor crystal. The method comprises: step A, introducing an inert protection gas into a furnace body (1) through a bearing gas inlet pipe (5); step B, heating a crucible (2) in the furnace body (1) to melt a pre-synthesized raw material in the crucible (2); step C, introducing a heated inert protection gas into the furnace body (1) through the bearing gas inlet pipe (5); step D, downwards moving a phosphorus source furnace (4) loaded with red phosphorus until the injection pipe (4-4) on the phosphorus source furnace (4) is immersed in the me step E, heating the red phosphorus by the phosphorus source furnace (4) and generating phosphorus gas, mixing the phosphorus gas and the inert protection gas, injecting the mixture into the melt (1) through the injection pipe (4-4), and allowing the phosphorus gas and the melt to react to generate the phosphide; and step F, closing devices after the synthesis is completed. During the synthesis, the inert protection gas is introduced through the bearing gas inlet pipe (5) to stably inject the phosphorus gas into the melt, so that the inverted suction of the melt into the phosphorus source furnace (42) after the complete absorption of the volatile element gas can be prevented.