EMITTER-BASE MESH STRUCTURE IN HETEROJUNCTION BIPOLAR TRANSISTORS FOR RF APPLICATIONS

摘要

In certain aspects, a heterojunction bipolar transistor (HBT) comprises a collector mesa (502), a base mesa (504) on the collector mesa, and an emitter mesa (506) on the base mesa. The emitter mesa has a plurality of openings (510). The HBT further comprises a plurality of base metals (514) in the plurality of openings and connected to the base mesa.