Extraction of interface states at emitter-base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation

摘要

Distribution of interface states at the emitter-base heterojunctions in heterostructure bipolar transistors (HBTs) is characterized by using current-voltage characteristics using sub-bandgap photonic excitation. Sub-bandgap photonic source with a photon e