首页> 外国专利> PLASMONIC LITHOGRAPHY FOR PATTERNING HIGH ASPECT-RATIO NANOSTRUCTURES

PLASMONIC LITHOGRAPHY FOR PATTERNING HIGH ASPECT-RATIO NANOSTRUCTURES

机译:等离子光刻技术用于绘制高纵横比纳米结构

摘要

A plasmonic device incorporating a special hyperbolic metamaterial (HMM) metamaterial is used for plasmonic lithography, including ultraviolet (UV) lithography. It may be a Type II HMM (∊||0 and ∊0) whose tangential component of the permittivity ∊|| is close to zero. Due to the high anisotropy of the Type II epsilon near zero (ENZ) HMM, only one plasmonic mode can propagate horizontally with low loss in a waveguide system with ENZ HMM as its core. In certain aspects, a Type II ENZ HMM comprises alternating layers of aluminum/aluminum oxide films and the associated unusual mode of light transmission is used to expose a photosensitive layer in a specially designed lithography system. Methods for making patterns of nanofeatures via such plasmonic lithography are also provided, including as a plasmonic roller device.
机译:包含特殊双曲线超材料(HMM)超材料的等离子设备用于等离子光刻,包括紫外线(UV)光刻。可能是II型HMM(∊ || <0和∊ || 的切向分量为接近零。由于II型epsilon接近零(ENZ)HMM的高各向异性,在以ENZ HMM为核心的波导系统中,只有一种等离子体模式可以低损耗地水平传播。在某些方面,II型ENZ HMM包括铝/氧化铝膜的交替层,并且相关联的不寻常的光透射模式用于在特别设计的光刻系统中曝光光敏层。还提供了通过这种等离子平版印刷术制作纳米特征图案的方法,包括作为等离子辊装置。

著录项

  • 公开/公告号WO2019126543A1

    专利类型

  • 公开/公告日2019-06-27

    原文格式PDF

  • 申请/专利权人 THE REGENTS OF THE UNIVERSITY OF MICHIGAN;

    申请/专利号WO2018US66869

  • 发明设计人 GUO LINGJIE JAY;CHEN XI;

    申请日2018-12-20

  • 分类号G02B1;G02B5;G02B5/18;

  • 国家 WO

  • 入库时间 2022-08-21 11:54:09

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