RESONANT CAVITY SURFACE PASSIVATION FILM OF SEMICONDUCTOR LASER DEVICE, MANUFACTURING METHOD AND DEVICE

摘要

A semiconductor laser device and a resonant cavity surface passivation film (100) thereof, and a manufacturing method. The resonant cavity surface passivation film (100) comprises: a passivation layer (101), directly covering a resonant cavity surface of the semiconductor laser device; and a protection layer (102), covering on the passivation layer (101), and the material of the protection layer (102) being a broad-band gap semiconductor material. This method allows the resonant cavity surface passivation film (100) to be effective for a long time, improving the capability of resistance to catastrophic optical damage of the semiconductor laser device, increasing the maximum power output of the semiconductor laser device, thereby ensuring the reliability of the semiconductor laser device, and prolonging the service life of the semiconductor laser device.