MANUFACTURING METHOD FOR SILICON NANOWIRES INTEGRATED WITH MICROSCALE SILICON STRUCTURES

摘要

Embodiments of the present invention relate to a method for manufacturing a silicon nanowire integrated with a microscale silicon structure. The method comprises the steps of: (S100) forming a first oxide film on a substrate; (S200) etching the substrate to form a recessed region for separating a nanowire region and a microscale structure region using the first oxide film as a mask; (S300) forming a second oxide film on the etched substrate through a thermal oxidation process; (S400) removing the second oxide film on a bottom surface of the recessed; and (S500) performing wet etching on the substrate to float a nanowire. Therefore, the method may individually control a width and thickness of the nanowire.