SILICON NANOWIRES FORMED BETWEEN TOP AND BOTTOM OF MICROSCALE SENSOR STRUCTURES AND MANUFACTURING METHOD THEREOF

摘要

Embodiments include forming a first oxide layer on a silicon substrate (S100), etching the silicon substrate to create a recessed region for separating the nanocrystal structure from the microscale sensor structure using the first oxide layer as a mask Forming a second oxide film on the silicon substrate through a thermal oxidation process (S300); etching the recessed region to a predetermined depth in a vertical direction (S400); forming a third oxide film (S500), and etching the silicon substrate (S600) so that the nanowire structure is suspended while the floating nanowire is removed. The micro-scale sensor structure is disposed between the upper and lower ends of the microscale sensor structure / RTI