SILICON NANOWIRES FORMED BETWEEN TOP AND BOTTOM OF MICROSCALE SENSOR STRUCTURES AND MANUFACTURING METHOD THEREOF

摘要

Embodiments relate to a method of manufacturing a nanowire disposed between a top and a bottom of a microscale sensor structure, including: a step (S100) of forming a first oxide film on a silicon substrate; a step (S200) of etching the silicon substrate by using the first oxide film as a mask, such that a recessed region for dividing a nano-column structure and the microscale sensor structure is formed; a step (S300) of forming a second oxide film on the silicon substrate through a thermal oxidation process; a step (S400) of further etching the recessed region by a predetermined depth in a vertical direction; a step (S500) of forming a third oxide film on the silicon substrate through the thermal oxidation process; and a step (S600) of etching the silicon substrate such that floating nanowires are formed as a bottom of the nano-column structure is removed. Accordingly, a residual stress applied to both ends of the nanowire is reduced.