CIGS CIGS Preparation of CIGS thin film solar cell and CIGS thin film solar cell using the same

摘要

The present invention relates to a method of manufacturing a CIGS thin film solar cell with excellent performance and a CIGS thin film solar cell manufactured using the same. More specifically, the method comprises the steps of: forming an antimony (Sb) layer on a substrate on which a metal electrode is deposited; forming a first thin film layer including copper (Cu), indium (In), and gallium (Ga) metal precursor layers on the antimony (Sb) layer; forming a second thin film layer including at least one type of selenium (Se) and a sulfur (S) metal precursors on the first thin film layer; and forming a CIGS absorption layer in which gallium (Ga) is uniformly distributed by treating the formed antimony (Sb) layer, first thin film layer, and second thin film layer with heat.