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BUMP STRUCTURE SEMICONDUCTOR PACKAGE INCLUDING THE BUMP STRUCTURE AND METHOD OF FORMING THE BUMP STRUCTURE

机译:包括凹凸结构的凹凸结构半导体封装及其形成方法

摘要

According to a bump structure forming method, an under bump metal (UBM) layer can be formed on a pad of a semiconductor chip. A pillar bump can be formed on the UBM layer. A photoresist pattern including an outer surface of the pillar bump and an opening exposing a part of the UBM layer can be formed on the UBM layer. A capping film can be formed in the opening of the photoresist pattern. Therefore, a height, at which a bonding force between the pillar bump and a package substrate can be maintained, can be accurately imparted while suppressing stress applied to a metal wire in the semiconductor chip in the capping film.
机译:根据凸块结构形成方法,可以在半导体芯片的焊盘上形成凸块下金属(UBM)层。可以在UBM层上形成柱状凸块。可以在UBM层上形成包括柱状凸块的外表面和暴露一部分UBM层的开口的光致抗蚀剂图案。可以在光致抗蚀剂图案的开口中形成覆盖膜。因此,可以在抑制覆盖膜中的半导体芯片中施加于金属线的应力的同时,准确地赋予能够维持柱状凸块与封装基板之间的结合力的高度。

著录项

  • 公开/公告号KR20190036776A

    专利类型

  • 公开/公告日2019-04-05

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20170126083

  • 发明设计人 NOH BO IN;

    申请日2017-09-28

  • 分类号H01L23;H01L21/027;H01L21/288;H01L21/56;

  • 国家 KR

  • 入库时间 2022-08-21 11:51:15

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