3 3DIMENSIONAL FLASH MEMORY DEVICE INCLUDING VERTICAL CHANNEL STRUCTURE WITH DIFFERENT HOLE SIZE AND THE MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a three-dimensional flash memory element including a vertical channel structure having different hole sizes formed therein and a manufacturing method thereof. A structure including different hole sizes for each vertical cell group is formed so as to form a stable vertical channel layer in a high-stage three-dimensional flash memory architecture of 100 stages or greater.