3 3DIMENSIONAL FLASH MEMORY DEVICE INCLUDING VERTICAL CHANNEL STRUCTURE WITH DIFFERENT HOLE SIZE AND THE MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a three-dimensional flash memory device including a vertical channel structure formed in a different hole size and a method for manufacturing the same, forming a structure including a different hole size (Hole size) for each vertical cell group 100 or more stages It is possible to form a stable vertical channel layer in a high-speed three-dimensional flash memory architecture.