IGBTPlanar gate field stop insulated gate bipolar transistor

摘要

The present invention relates to a power semiconductor. According to an embodiment of the present invention, provided is a power semiconductor having a buffer layer for field stop. The power semiconductor comprises: a first conductivity type drift layer doped with a first conductivity type impurity; a second conductivity type base extended from an upper surface of the first conductivity type drift layer to the inside of the first conductivity type drift layer and doped with a second conductivity type impurity; a first conductivity type emitter region extended from an upper surface of the second conductivity type base to the inside of the second conductivity type base and doped with the first conductivity type impurity; a second conductivity type emitter region extended from the upper surface of the second conductivity type base to the inside of the second conductivity type base and doped with the second conductivity type impurity; a gate formed adjacent to the second conductivity type base; a first conductivity type buffer layer formed on a lower part of the first conductivity type drift layer and doped with the first conductivity type impurity; and a second conductivity type collector layer formed on a lower part of the first conductivity type buffer layer and doped with the second conductivity type impurity, wherein the resistivity of the first conductivity type drift layer is 40 Ωcm, and the conductivity of the first conductivity type impurity of the first conductivity type buffer layer may be 8.0 x 10^13 cm^-2 to 2.0 x 10^14 cm^-2.