/ DUAL PLASMA VOLUME PROCESSING APPARATUS FOR NEUTRAL/ION FLUX CONTROL

摘要

The semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first plasma generation volume and the second plasma generation volume do. The first electrode is defined to deliver radio frequency (RF) power to the first plasma generation volume and to distribute the first plasma process gas to the first plasma generation volume. The second electrode is defined to deliver RF power to the second plasma generation volume and hold the substrate in an exposed state relative to the second plasma generation volume. The gas distribution unit includes an array of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an array of gas supply ports defined to distribute the second plasma process gas to the second plasma generation volume.