-- STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON GLOBALLY OR LOCALLY ISOLATED SUBSTRATES

摘要

A modified gate-all-around semiconductor device formed on a fully or locally isolated substrate is described. For example, a semiconductor device includes a semiconductor substrate. The insulating structure is disposed on the semiconductor substrate. The three-dimensional channel region is disposed over the insulating structure. The source and drain regions are disposed on either side of the three-dimensional channel region and on the epitaxial seed layer. The epitaxial seed layer is comprised of a semiconductor material that is different from the three dimensional channel region and disposed on the insulating structure. The gate electrode stack is partially disposed on the insulating structure and laterally adjacent to the epitaxial seed layer to surround the three dimensional channel region.