Recessed channel type transistor having improved current-leakage characteristics

摘要

A non-planar channel including a silicon body (2) in which a drain region and a source region are respectively formed and a gate insulating film (7) in which a predetermined portion is embedded in the silicon body (2) between the drain region and the source region The insulator 10 is embedded in the silicon body 2 corresponding to the drain region or the source region and the insulator 10 is embedded in the insulator 10 with respect to the height direction (Y axis direction) of the silicon body 2. [ Is higher than the lower surface of the gate insulating film (7) buried in the silicon body (2).